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1 article(s) from Yaacob, Khatijah Aisha

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

Siti Noorhaniah Yusoh and
Khatijah Aisha Yaacob

Beilstein J. Nanotechnol. 2016, 7, 1461–1470, doi:10.3762/bjnano.7.138

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Figure 1: Pattern of silicon oxide nanowire with left and right square pads prior to etching.

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Figure 2: AFM images of silicon nanowire after wet etching using (a) 25 wt % TMAH (b) 25 wt % TMAH with 10 vo...

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Figure 3: Relation of etching depth and width of a silicon nanowire at different IPA concentrations.

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Figure 4: Relationships of etching depth and width of a silicon nanowire at different etching times.

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Figure 5: Cross-section of silicon nanowires before and after etching.

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Figure 6: Calculation of silicon nanowire wall angle after etching; E_d represents the etching depth and a is ...

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Figure 7: Wall angles obtained at different concentrations of IPA at constant etching time.

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Figure 8: Wall angles obtained at a constant IPA concentration with different etching times.

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Figure 9: The relationship of the etching rate and surface roughness at different IPA concentrations.

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Figure 10: Formation of an IPA monolayer due to a high concentration of IPA in TMAH, resulting in a slow etchi...

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Figure 11: Elimination of the IPA monolayer due to saturation concentration of IPA in TMAH, resulting in a fas...

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Figure 12: Surface roughness of silicon nanowires by using different concentration of IPA (a) TMAH 25 wt %, wi...

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Figure 13: Relationship of etching rate and surface roughness at different etching times.

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Figure 14: FESEM and EDX analysis of fabricated silicon nanowire structures after etching, (a) TMAH 25 wt %, (...

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Figure 15: Steps of the silicon nanowire fabrication process.

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Full Research Paper

Published 17 Oct 2016

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